摘要： The study demonstrates that microwave processing in a domestic microwave oven (2.45 GHz) can rapidly increase the bonding strength of Si/Si, Si/SiO2, and SiO2/SiO2 pairs bonded through oxygen plasma surface activation. After 10-min, 900 W microwave processing, the bonding strength of the Si/SiO2 pair (2.4 J/m2) was almost twice the bonding strengths of the Si/Si and SiO2/SiO2 pairs (∼1.3 J/m2). Based on these bonding characteristics of the Si/SiO2 pair, we can employ a two-stage microwave processing technique, at powers of 540 W and 900 W, to transfer a silicon layer onto an 8" silicon handle wafer from the as-bonded stage in 30 min. 其他題名： ECS Solid State Lett 出版者： The Electrochemical Society 出版日期： 2014-01-01 出處： ECS solid state letters, 2014-01, Vol.3 (1), p.P4-P6 版權： 2013 The Electrochemical Society 識別號： ISSN: 2162-8742 識別號： EISSN: 2162-8750 識別號： DOI: 10.1149/2.006401ssl
