Enhanced performance of Au/P3HT/(bilayer dielectrics)/si thin-film-transistor having gold nanoparticles chemically bonded to P3HT

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題名:	Enhanced performance of Au/P3HT/(bilayer dielectrics)/si thin-film-transistor having gold nanoparticles chemically bonded to P3HT
作者:	何正榮;Wong, Mon-Chi;Yeh, Shin-Chi;Chiu, Li-Ko;Chen, Yen-Heng;Ho, Jeng-Rong;Tsiang, Raymond Chien-Chao
貢獻者:	工學院機械工程學系
關鍵詞:	Charge carriers;Contact;Devices;Dielectrics;Gold;Nanoparticles;Nanostructure;Saturation;Thin films
日期:	2012-07-03
上傳時間:	2026-04-23 15:07:41 (UTC+8)
出版者:	American Scientific Publishers;26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers
摘要:	摘要： The charge transport enhancement of using poly(3-hexylthiophene) covalently bonded with gold nanoparticles as an active layer in a bottom-gate/top contact, Au/(P3HT)/(bilayer dielectric)/Si OTFT device has been studied. P3HT was synthesized via the modified Grignard metathesis method and functionalized to have a thiol terminal (P3HTSH). Gold nanoparticles (AuNPs) with sizes ranging from 2 to 10 nm were then formed via a reduction of HAuCl4 in the presence of P3HTSH. Compared to the pristine P3HT, the AuNPs-containing P3HT composite materials have a higher energy level of HOMO and a smaller electrochemical bandgap Egchem. The smaller bandgap enhances the charge carrier mobility and the higher HOMO energy level indicates a reduced barrier and an increased injection rate for charge carrier at the source contact. Furthermore, the threshold voltage VT of AuNPs-containing P3HT samples remain nearly unchanged and their saturation current ID and the field-effect mobility are higher. An OTFT device fabricated with a composite sample containing 1.30% AuNPs has a carrier mobility and saturation current nearly two time higher than pristine P3HT. 其他題名： J Nanosci Nanotechnol 出版者： 26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers 出版日期： 2012-03-01 出處： Journal of nanoscience and nanotechnology, 2012-03, Vol.12 (3), p.2292-2299 識別號： ISSN: 1533-4880 識別號： DOI: 10.1166/jnn.2012.5720 識別號： PMID: 22755050
顯示於類別:	[機械工程學系] 期刊論文

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