Enhancement of Ti-containing hydrogenated carbon (TiC:H) films by high-power plasma-sputtering

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Title:	Enhancement of Ti-containing hydrogenated carbon (TiC:H) films by high-power plasma-sputtering
Authors:	李雄;Gwo, Jyh;Chu, Chun-Lin;Tsai, Ming-Jui;Lee, Shyong
Contributors:	工學院機械工程學系
Keywords:	Condensed matter: electronic structure, electrical, magnetic, and optical properties;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Diamond-like carbon;Exact sciences and technology;High-power pulsed magnetron sputtering;Me[sbnd]DLC;Physics
Date:	2012-02-01
Issue Date:	2026-04-23 15:08:41 (UTC+8)
Publisher:	Elsevier;Amsterdam: Elsevier B.V
Abstract:	摘要： ► A high power pulsed magnetron sputtering was explored in depositing TiC:H thin film on a stainless steel 304. ► The sputtering processed TiC:H thin film/stainless steel 304 system exhibits minimal residual stress. ► The TiC:H thin film adheres firmly to the substrate showing the effectiveness of this process. Ti-containing amorphous hydrogenated carbon (TiC:H) thin films were deposited on stainless steel SS304 substrates by high-power pulsed magnetron sputtering (HPPMS) in an atmosphere of mixed Ar and C2H2 gases using titanium metal as the cathodic material. The multilayer structure of the deposited film had a TiTiCDLC gradient to improve adhesion and reduce residual stress. This study investigates the effects of substrate bias and target-to-substrate distance on the mechanical properties of TiC:H films. Film properties, including composition, morphology, microstructure, mechanical, and tribology, were examined by glow discharge spectroscopy (GDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and a nanoindenter and a pin-on-disk tribometer. Experiments revealed impressive results. 出版者： Amsterdam: Elsevier B.V 出版日期： 2012-02-01 出處： Applied surface science, 2012-02, Vol.258 (8), p.3433-3437 版權： 2011 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0169-4332 識別號： EISSN: 1873-5584 識別號： DOI: 10.1016/j.apsusc.2011.11.090
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