摘要： The influence of fabrication parameters on ZnO film properties has been analyzed through conducting several experiment processes to develop an appropriate deposition condition for obtaining highly c -axis textured films. A transducer with the structure of Al/ZnO/Al/Si was fabricated at low deposition rate and under a temperature of 380 °C in a mixture of gases Ar:O 2 = 1:3, and RF power of 178 W. Pt/Ti was employed as the bottom electrode of the transducer fabricated in a suitable substrate temperature, which starts increasing at 380 °C with an increment of 20 °C for each 2 h stage of the deposition. Highly c -axis textured ZnO films have been successfully deposited on Pt/Ti/SiO 2 /Si substrate under feasible conditions, including RF power of 178 W, substrate temperature of 380 °C, deposition pressure of 1.3 Pa and Ar:O 2 gas flow ratio of 50%. These conditions have been proposed and confirmed through investigating the influences of the sputtering parameters, such as substrate temperature, RF power and Ar:O 2 gas flow ratio, on the properties of ZnO films. 其他題名： J Mater Sci: Mater Electron 出版者： Boston: Springer US 出版日期： 2012-02-01 出處： Journal of materials science. Materials in electronics, 2012-02, Vol.23 (2), p.418-424 資源來源： EBSCOhost OmniFile Full Text Select 版權： Springer Science+Business Media, LLC 2011 版權： Springer Science+Business Media, LLC 2012 識別號： ISSN: 0957-4522 識別號： EISSN: 1573-482X 識別號： DOI: 10.1007/s10854-011-0490-y
