English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 94274/94274 (100%)
造訪人次 : 82906541      線上人數 : 2387
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/108878


    題名: Few layer graphene paper from electrochemical process for heat conduction
    作者: 陳志臣;Gee, C-M.;Tseng, C-C.;Wu, F-Y.;Lin, C-T.;Chang, H-P.;Li, L-J.;Chen, J-C.;Hu, L-H.
    貢獻者: 工學院機械工程學系
    關鍵詞: Conduction;Cross-plane;Electrochemical exfoliation;Few layer graphene;Graphene;Graphene paper;Graphite;Heat transfer;In-plane;Oxides;Thermal conductivity;Thermoelectricity
    日期: 2014-01-01
    上傳時間: 2026-04-23 15:11:15 (UTC+8)
    出版者: Maney Publishing;Taylor & Francis
    摘要: 摘要: The graphene paper fabricated through an electrochemical exfoliation and filtration process provides high quality and massive graphene sheets in an ink form synthesised using artificial graphite as starting material. The product is mainly composed of bilayer and few layer graphene. Their lateral size can be up to >10 μm, and the quality determined by Raman spectroscopy is better than reduced graphene oxide. The cross-plane and in-plane thermal conductivity of the graphene paper can reach 5·5 and 3300 W m −1 K −1 measured by the direct method and the thermoelectric method respectively.
    出版者: Taylor & Francis
    出版日期: 2014-04-01
    出處: Materials research innovations, 2014-04, Vol.18 (3), p.208-213
    版權: W. S. Maney & Son Ltd. 2014 2014
    識別號: ISSN: 1432-8917
    識別號: EISSN: 1433-075X
    識別號: DOI: 10.1179/143289113X13826126858666
    顯示於類別:[機械工程學系] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML13檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明