High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials

NCUIR > Engineering College > Departmant of Mechanical Engineering > journal & Dissertation > Item 987654321/108900

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108900

Title:	High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials
Authors:	洪銘聰;Chang, Hung-Tai;Wang, Ching-Chi;Hsu, Jung-Chao;Hung, Ming-Tsung;Li, Pei-Wen;Lee, Sheng-Wei
Contributors:	工學院機械工程學系
Date:	2013-03-11
Issue Date:	2026-04-23 15:13:27 (UTC+8)
Publisher:	American Institute of Physics;AIP Publishing
Abstract:	摘要： We present an effective approach to grow high-quality thin film of composite quantum dots (CQDs) as a building block for thermoelectric materials, in which 3 times the usual Ge deposition can be incorporated within a 3-fold CQD. Selective chemical etching experiments reveal that a thin Si inserted layer in the CQDs modifies the growth mechanism through surface-mediated diffusion and SiGe alloying. Such thin-film-like CQD materials are demonstrated to exhibit reduced thermal conductivity κ⊥ with respect to the conventional QDs, perhaps as a consequence of enhanced diffusive phonon scattering from the high Si/Ge interface density and enhanced local alloying effect. 出版者： AIP Publishing 出版日期： 2013-03-11 出處： Applied Physics Letters, 2013-03, Vol.102 (10) 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4794943
Appears in Collections:	[Departmant of Mechanical Engineering ] journal & Dissertation

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