Increasing more bonding energy in nitrogen plasma-activated wafer bonding by HF-dip

NCUIR > Engineering College > Departmant of Mechanical Engineering > journal & Dissertation > Item 987654321/108922

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Title:	Increasing more bonding energy in nitrogen plasma-activated wafer bonding by HF-dip
Authors:	李天錫;Lo, F.-S.;Chiang, C. C.;Li, C.;Lee, T.-H.
Contributors:	工學院機械工程學系
Date:	2014-01-01
Issue Date:	2026-04-23 15:15:02 (UTC+8)
Publisher:	The Electrochemical Society
Abstract:	摘要： Nitrogen plasma-activated wafer bonding provides high-strength Si/Si wafer bonding. We found that a hydrofluoric (HF) pre-dip treatment can increase more bonding energy. By reducing drastically the annealing temperature to as low as 75°C, HF-dip and subsequent nitrogen-plasma activation can result in an bonding energy of the Si/Si pair comparable to the silicon fracture strength (2500 mJ/m2). In Si3N4/Si3N4 wafer bonding, the room-temperature bonding results in interface energy as high as 537 mJ/m2 and then reaches the silicon fracture strength through annealing at 200°C for 24 hours. We suggest that the high-strength bonding mechanism is the formation of Si-NH-Si bonds during annealing. 其他題名： ECS Solid State Lett 出版者： The Electrochemical Society 出版日期： 2014-01-01 出處： ECS solid state letters, 2014-01, Vol.3 (8), p.P102-P104 版權： 2014 The Electrochemical Society 識別號： ISSN: 2162-8742 識別號： EISSN: 2162-8750 識別號： DOI: 10.1149/2.0031408ssl
Appears in Collections:	[Departmant of Mechanical Engineering ] journal & Dissertation

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