Inhibition effect of a laser on thickness increase of p-type porous silicon in electrochemical anodizing

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题名:	Inhibition effect of a laser on thickness increase of p-type porous silicon in electrochemical anodizing
作者:	李天錫;Chiang, C. C.;Juan, P. C.;Lee, T.-H.
贡献者:	工學院機械工程學系
日期:	2016-01-01
上传时间:	2026-04-23 15:15:46 (UTC+8)
出版者:	Electrochemical Society, Inc.;The Electrochemical Society
摘要:	摘要： We demonstrate that the thickness increase of the porous layer on p-type (1-10 ohm-cm) silicon can be inhibited from hundreds to several nm/min in regular anodizing by exposure to He-Ne laser irradiation. During 2.0 mW laser irradiation, the growth in thickness was reduced to 5-6 nm/minute by anodizing with a current density of 10 mA/cm2. The inhibition effect on the thickness increase of porous silicon depends significantly on the laser power during a fixed anodizing time. 其他題名： J. Electrochem. Soc 出版者： The Electrochemical Society 出版日期： 2016-01-01 出處： Journal of the Electrochemical Society, 2016-01, Vol.163 (5), p.H265-H268 資源來源： Institute of Physics Journals 版權： The Author(s) 2016. Published by ECS. 識別號： ISSN: 0013-4651 識別號： ISSN: 1945-7111 識別號： EISSN: 1945-7111 識別號： DOI: 10.1149/2.0851603jes
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