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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108951


    Title: Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots
    Authors: 洪銘聰;Chang, J E;Liao, P H;Chien, C Y;Hsu, J C;Hung, M T;Chang, H T;Lee, S W;Chen, W Y;Hsu, T M;George, Tom;Li, P W
    Contributors: 工學院機械工程學系
    Keywords: Germanium;matrix;Optical properties;Quantum confinement;Quantum dots;Silicon dioxide;Silicon nitride;Surface energy;Thermal properties;thermoelectrics
    Date: 2012-03-14
    Issue Date: 2026-04-23 15:17:23 (UTC+8)
    Publisher: IOP Publishing Ltd.;IOP Publishing
    Abstract: 摘要: The influence of SiO2 and Si3N4 dielectric matrices on the structural, phonon, luminescence and thermal properties of Ge quantum dots (QDs) has been experimentally investigated. Compared with the case of QDs in SiO2 layers, Si3N4 matrix imposes large interfacial surface energy on QDs and enhances their Ostwald ripening rate, appearing to be conducive for an improvement in crystallinity and a morphology change to a more perfectly spherical shape of Ge QDs. Quantum confinement induced electronic structure modulation for Ge QDs is observed to be strongly influenced not only by the QD size but also by the embedded matrix. Both matrix and surface effects offer additional mechanisms to QD itself for controlling the optical and thermal properties of the QDs.
    其他題名: JPhysD
    其他題名: J. Phys. D: Appl. Phys
    出版者: IOP Publishing
    出版日期: 2012-03-14
    出處: Journal of physics. D, Applied physics, 2012-03, Vol.45 (10), p.105303-1-9
    資源來源: Institute of Physics Journals
    版權: 2012 IOP Publishing Ltd
    識別號: ISSN: 0022-3727
    識別號: EISSN: 1361-6463
    識別號: DOI: 10.1088/0022-3727/45/10/105303
    識別號: CODEN: JPAPBE
    Appears in Collections:[Departmant of Mechanical Engineering ] journal & Dissertation

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