Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal-melt interface during the process of Czochralski silicon crystal growth

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Title:	Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal-melt interface during the process of Czochralski silicon crystal growth
Authors:	陳志臣;Teng, Ying-Yang;Chen, Jyh-Chen;Huang, Cheng-Chuan;Lu, Chung-Wei;Wun, Wan-Ting;Chen, Chi-Yung
Contributors:	工學院機械工程學系
Keywords:	A1. Computer simulation;A1. Heat transfer;A1. Impurities;A1. Mass transfer;Applied sciences;B3. Solar cells;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Crucibles;Crystal growth;Crystals;Defects and impurities in crystals;microstructure;Energy;Exact sciences and technology;Fluid flow;Growth from melts;zone melting and refining;Heat shields;Impurities: concentration, distribution, and gradients;Materials science;Melts;Methods of crystal growth;physics of crystal growth;Natural energy;Photovoltaic conversion;Physics;Solar cells. Photoelectrochemical cells;Solar energy;Structure of solids and liquids;crystallography;Theory and models of crystal growth;physics of crystal growth, crystal morphology and orientation;Vortices;Walls
Date:	2012-08-01
Issue Date:	2026-04-23 15:19:14 (UTC+8)
Publisher:	Elsevier;Amsterdam: Elsevier B.V
Abstract:	摘要： In this study, a numerical simulation is performed to investigate the effect of the shape of the heat shield on the oxygen concentration in the melt. The results show that the oxygen concentration in the melt can be significantly decreased by increasing the speed of the argon gas near the crucible wall. This can be achieved by enlarging the horizontal length of the heat shield. The oxygen concentration at the melt–crystal interface varies with the length of the crystal growth. In the initial stage, there is a significant decrease in the oxygen concentration as the growth length increases. There is also a significant reduction in the emission of oxygen from the crucible wall due to the lower melt depth and crucible temperature. The transportation of oxygen impurity towards the melt–crystal interface is suppressed by the vortex motion in the melt. When the crystal exceeds a certain length, the oxygen concentration in the melt–crystal interface starts to increase with increasing crystal length, due to the drop in vortex motion in the melt. ► Effect of heat shield shape on oxygen for CZ furnace is studied. ► Oxygen is decreased by enlarging the horizontal length of the heat shield. ► The oxygen and SiO transport in CZ furnace with the heat shield shape is explained. 出版者： Amsterdam: Elsevier B.V 出版日期： 2012-08-01 出處： Journal of crystal growth, 2012-08, Vol.352 (1), p.167-172 版權： 2012 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2011.12.070 識別號： CODEN: JCRGAE
Appears in Collections:	[Departmant of Mechanical Engineering ] journal & Dissertation

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