摘要： A numerical simulation has been performed to determine the concentration of oxygen and carbon in a Si melt during the mc-Si ingot growth process under the influence of a gas guidance device. With the application of this gas guidance device, the gas velocity above the free surface may increase, followed by a decrease in the SiO and CO concentrations flux at the free surface. As a consequence oxygen and carbon concentrations in the melt may decrease. The effectiveness of the gas flow guidance device mainly depends on the gap between it and the free surface. A lower oxygen concentration in the melt may be obtained with a smaller gap. On the other hand, the carbon concentration in the melt also decreases as the gap decreases until the gap reaches a certain small value, after which it increases. ► Multicrystalline silicon ingot growth. ► Concentrations of oxygen and carbon in the silicon melt. ► Impurity transport under the effect of a gas flow guidance device. ► Optimum position for the gas guidance device to obtain the lowest impurities. 出版者： Amsterdam: Elsevier B.V 出版日期： 2014-01-01 出處： Journal of crystal growth, 2014-01, Vol.385, p.1-8 版權： 2013 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2013.01.040 識別號： CODEN: JCRGAE
