Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification process

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題名:	Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification process
作者:	陳志臣;Teng, Ying-Yang;Chen, Jyh-Chen;Huang, Bo-Siang;Chang, Ching-Hsin
貢獻者:	工學院機械工程學系
關鍵詞:	A1. Computer simulation;A1. Heat transfer;A1. Impurities;A1. Mass transfer;Applied sciences;B3. Solar cells;Carbon;Computer simulation;Cross-disciplinary physics: materials science;rheology;Devices;Energy;Exact sciences and technology;Gas flow;Growth from melts;zone melting and refining;Ingots;Materials science;Mathematical models;Melts;Methods of crystal growth;physics of crystal growth;Natural energy;Phase diagrams and microstructures developed by solidification and solid-solid phase transformations;Photovoltaic conversion;Physics;Silicon;Solar cells. Photoelectrochemical cells;Solar energy;Solidification;Theory and models of crystal growth;physics of crystal growth, crystal morphology and orientation
日期:	2014-01-01
上傳時間:	2026-04-23 15:19:25 (UTC+8)
出版者:	Elsevier;Amsterdam: Elsevier B.V
摘要:	摘要： A numerical simulation has been performed to determine the concentration of oxygen and carbon in a Si melt during the mc-Si ingot growth process under the influence of a gas guidance device. With the application of this gas guidance device, the gas velocity above the free surface may increase, followed by a decrease in the SiO and CO concentrations flux at the free surface. As a consequence oxygen and carbon concentrations in the melt may decrease. The effectiveness of the gas flow guidance device mainly depends on the gap between it and the free surface. A lower oxygen concentration in the melt may be obtained with a smaller gap. On the other hand, the carbon concentration in the melt also decreases as the gap decreases until the gap reaches a certain small value, after which it increases. ► Multicrystalline silicon ingot growth. ► Concentrations of oxygen and carbon in the silicon melt. ► Impurity transport under the effect of a gas flow guidance device. ► Optimum position for the gas guidance device to obtain the lowest impurities. 出版者： Amsterdam: Elsevier B.V 出版日期： 2014-01-01 出處： Journal of crystal growth, 2014-01, Vol.385, p.1-8 版權： 2013 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2013.01.040 識別號： CODEN: JCRGAE
顯示於類別:	[機械工程學系] 期刊論文

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