Numerical simulation of oxygen transport during the Czochralski silicon crystal growth with a cusp magnetic field

NCUIR > Engineering College > Departmant of Mechanical Engineering > journal & Dissertation > Item 987654321/108989

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108989

Title:	Numerical simulation of oxygen transport during the Czochralski silicon crystal growth with a cusp magnetic field
Authors:	陳志臣;Chen, J.-C.;Guo, P.-C.;Chang, C.-H.;Teng, Y.-Y.;Hsu, C.;Wang, H.-M.;Liu, C.-C.
Contributors:	工學院機械工程學系
Date:	2014-09-01
Issue Date:	2026-04-23 15:19:28 (UTC+8)
Publisher:	Elsevier;Elsevier BV
Abstract:	出版者： Elsevier BV 出版日期： 2014-09 出處： Journal of Crystal Growth, 2014-09, Vol.401, p.888-894 識別號： ISSN: 0022-0248 識別號： DOI: 10.1016/j.jcrysgro.2013.10.040
Appears in Collections:	[Departmant of Mechanical Engineering ] journal & Dissertation

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