Organic thin-film-transistor Au/poly(3-hexylthiophene)/(bilayer dielectrics)/Si having carbon nanotubes chemically bonded to poly(3-hexylthiophene) in the active layer

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題名:	Organic thin-film-transistor Au/poly(3-hexylthiophene)/(bilayer dielectrics)/Si having carbon nanotubes chemically bonded to poly(3-hexylthiophene) in the active layer
作者:	何正榮;Li, Fang-Chi;Tsai, Shin-Chi;Yeh, Cheng-Yang;Yeh, Je-Yuan;Chou, Ying-Shiun;Ho, Jeng-Rong;Tsiang, Raymond Chien-Chao
貢獻者:	工學院機械工程學系
關鍵詞:	Carbon nanotubes;Charge carriers;Contact;Devices;Dielectrics;Energy levels;Gold;Saturation;Thin films
日期:	2014-01-01
上傳時間:	2026-04-23 15:21:43 (UTC+8)
出版者:	American Scientific Publishers;26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers
摘要:	摘要： Using poly(3-hexylthiophene) (P3HT) covalently bonded with carbon nanotubes (CNT) as an active layer in a bottom-gate/top contact, Au/(P3HT)/(bilayer dielectric)/Si OTFT device has resulted in an enhanced charge transport. The CNTs were firstly functionalized via ligand exchange with ferrocene, next lithiated by sec-butyllithium (s-BuLi) and then linked anionically with P3HT which has been synthesized via the modified Grignard metathesis method. Compared to the pristine P3HT, the CNTs-containing P3HT composite material has a higher energy level of HOMO and a smaller electrochemical bandgap Echemg. The smaller bandgap enhances the charge carrier transport and the higher HOMO energy level indicates a reduced barrier and an increased injection rate for charge carriers at the source contact. Furthermore, the threshold voltage VT of CNTs-containing P3HT samples is lower and its saturation current ID and the the field-effect mobility are higher. An OTFT device fabricated with such a composite sample containing 1.16% CNTs has a carrier mobility and saturation current three to five times higher than pristine P3HT. 其他題名： J Nanosci Nanotechnol 出版者： 26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers 出版日期： 2014-07-01 出處： Journal of nanoscience and nanotechnology, 2014-07, Vol.14 (7), p.5019-5027 識別號： ISSN: 1533-4880 識別號： EISSN: 1533-4899 識別號： DOI: 10.1166/jnn.2014.9259 識別號： PMID: 24757975
顯示於類別:	[機械工程學系] 期刊論文

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