PEDOT:PSS/graphene nanocomposite hole-injection layer in polymer light-emitting diodes

NCUIR > Engineering College > Departmant of Mechanical Engineering > journal & Dissertation > Item 987654321/109010

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/109010

Title:	PEDOT:PSS/graphene nanocomposite hole-injection layer in polymer light-emitting diodes
Authors:	何正榮;Lin, Chun-Hsuan;Chen, Kun-Tso;Ho, Jeng-Rong;Cheng, J.-W. John;Tsiang, Raymond Chien-Chao
Contributors:	工學院機械工程學系
Keywords:	Devices;Doping;Graphene;Nanocomposites;Nanomaterials;Nanostructure;Oxides;Polystyrene resins
Date:	2012-05-21
Issue Date:	2026-04-23 15:22:07 (UTC+8)
Publisher:	Hindawi Limited;Cairo, Egypt: Hindawi Limiteds
Abstract:	摘要： We report on effects of doping graphene in poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate), PEDOT:PSS, as a PEDOT:PSS/graphene nanocomposite hole injection layer on the performance enhancement of polymer light-emitting diodes (PLEDs). Graphene oxides were first synthesized and then mixed in the PEDOT:PSS solution with specifically various amounts. Graphenes were reduced in the PEDOT:PSS matrix through thermal reduction. PLED devices with hole-injection nanocomposite layer containing particular doping concentration were fabricated, and the influence of doping concentration on device performance was examined by systematically characterizations of various device properties. Through the graphene doping, the resistance in the hole-injection layer and the turn-on voltage could be effectively reduced that benefited the injection and transport of holes and resulted in a higher overall efficiency. The conductivity of the hole-injection layer was monotonically increased with the increase of doping concentration, performance indices from various aspects, however, did not show the same dependence because faster injected holes might alter not only the balance of holes and electrons but also their combination locations in the light-emitting layer. Results show that optimal doping concentration was the case with 0.03 wt% of graphene oxide. 出版者： Cairo, Egypt: Hindawi Limiteds 出版日期： 2012-01-01 出處： Journal of Nanotechnology, 2012-01, Vol.2012 (2012), p.952-958 資源來源：華藝線上圖書館版權： Copyright © 2012 Chun-Hsuan Lin et al. 版權： Copyright © 2012 Chun-Hsuan Lin et al. Chun-Hsuan Lin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 識別號： ISSN: 1687-9503 識別號： ISSN: 1687-9511 識別號： EISSN: 1687-9511 識別號： DOI: 10.1155/2012/942629
Appears in Collections:	[Departmant of Mechanical Engineering ] journal & Dissertation

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