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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/109020


    題名: Preparation of nanostructured silicon surface for mass spectrometry analysis by an all-wet fabrication process using electroless metal deposition and metal assisted etching
    作者: 曹嘉文;Tsao, Chia-Wen;Yang, Zhi-Jie;Chung, Cheng-Wei
    貢獻者: 工學院機械工程學系
    關鍵詞: Desorption/ionization on silicon;Electroless metal deposition;Mass spectrometry;Matrix-free laser desorption/ionization;Metal assisted etching;Nanostructured silicon
    日期: 2012-05-15
    上傳時間: 2026-04-23 15:23:26 (UTC+8)
    出版者: Elsevier;Elsevier B.V
    摘要: 摘要: [Display omitted] ► A simple low-cost high-throughput all-wet fabrication process to create silicon nanostructure for mass spectrometry analysis is proposed. ► Electroless deposition and etching time effects are discussed. ► 150s electroless deposition and 180s etching time show highest mass spectrometry detection sensitivity. ► Silicon nanostructure surface assisted mass spectrometry can be used at lower fabrication cost and higher production throughput. Applying nanostructured silicon surface as a laser desorption/ionization mass spectrometry (LDI-MS) target substrate provides the benefits of rapid, simple, and matrix-free MS analysis with high detection sensitivity. A number of nanostructured silicon surface fabrication methods were demonstrated as effective LDI-MS target substrates. However, these techniques usually require expensive facilities, long process time and the fabrication throughputs are usually low. These restrictions limit most research labs to use nanostructured silicon surface as target substrate for MS analysis or to commercialize this technique with lower fabrication cost and higher production throughput at industrial scale. This study proposes a simple low-cost high-throughput all-wet fabrication process to create silicon nanostructure by using electroless deposition and metal assisted etching for LDI-MS analysis. The effect of electroless deposition and metal assisted etching process to the nanostructured silicon surface-assisted mass spectrometry (nSi-MS) desorption/ionization (D/I) efficiency is detail discussed. Result shows that nSi-MS target substrate can be effectively fabricated using the all-wet process with detection limit of 2000attomole.
    出版者: Elsevier B.V
    出版日期: 2012-05-15
    出處: International journal of mass spectrometry, 2012-05, Vol.321-322, p.8-13
    版權: 2012 Elsevier B.V.
    識別號: ISSN: 1387-3806
    識別號: EISSN: 1873-2798
    識別號: DOI: 10.1016/j.ijms.2012.05.007
    顯示於類別:[機械工程學系] 期刊論文

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