Processing characteristics using phosphorous dielectric on wire electrical discharge machining of polycrystalline silicon

NCUIR > Engineering College > Departmant of Mechanical Engineering > journal & Dissertation > Item 987654321/109022

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/109022

Title:	Processing characteristics using phosphorous dielectric on wire electrical discharge machining of polycrystalline silicon
Authors:	顏炳華;Yeh, Chin-Chang;Wu, Kun-Ling;Lee, Jyh-Wei;Yan, Biing-Hwa
Contributors:	工學院機械工程學系
Keywords:	Phosphorous dielectric;Polycrystalline silicon;Processing characteristics;Solar cell;Wire electrical discharge machining (WEDM)
Date:	2014-02-01
Issue Date:	2026-04-23 15:23:36 (UTC+8)
Publisher:	Taylor and Francis Ltd.;Taylor & Francis Group
Abstract:	摘要： In this study, wire electrical discharge machining (WEDM) was implemented to process polycrystalline silicon ingot, and the influences on processing characteristics were examined. There are two different dielectrics, pure water and pure water with sodium pyrophosphate powder, that were experimented to compare their effects on cutting speed: kerf loss and surface roughness. In the experiment, sodium pyrophosphate powder has shown that it has enhanced process efficiency and has improved surface smoothness. From the results, it has been found that by using phosphorous dielectric, the cutting speed increased 2.4 times than pure water. Meanwhile, by using phosphorous dielectric, it caused high temperature and brought about the electrolysis effect, which improved its surface roughness enhanced 16% compared with pure water. This also decreased kerf loss and boosted up the material utilized. Through WEDM, high-temperature characteristic forces the phosphorous element of the dielectric to infiltrate on the cutting surface of the polycrystalline silicon ingot. The result proved that using phosphorous dielectric on WEDM could increase the efficiency and surface roughness, and could infiltrate phosphorous element on the surface of the polycrystalline silicon ingot. These findings could be future references on the researches of solar cell in both industrial and academic fields. 出版者： Taylor & Francis Group 出版日期： 2014-02-01 出處： Materials and manufacturing processes, 2014-02, Vol.29 (2), p.146-152 資源來源： Business Source Premier - EBSCO 版權： Copyright Taylor & Francis Group, LLC 2014 識別號： ISSN: 1042-6914 識別號： EISSN: 1532-2475 識別號： DOI: 10.1080/10426914.2013.852203
Appears in Collections:	[Departmant of Mechanical Engineering ] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	8	View/Open

社群 sharing

Loading...