摘要 氮化鎵因為它的良好的物理性質而成為重要的材料並廣泛地應用於各種不同的面向上。現今，有許多的方法來製作氮化鎵，如金屬化學氣相沉積(MOCVD)、分子束磊晶(MBE)…等。但與基材常有晶格不匹配的現象，故利用氮化砷化鎵形成的緩衝層，再在其上製作氮化鎵是近年來發展的一種替代的方法。 實驗中的離子束氮化是利用10keV、5keV不同加速電壓的氮離子束，其離子束電流密度約在2~4μA之間，以三種不同的劑量來氮化砷化鎵，並利用X光電子能譜儀來做分析。氬離子束清潔碳、氧的汙染物，會在砷化鎵上形成富鎵的表面。利用X光電子能譜儀分析的結果，可發現加速電壓越大，所形成的氮化鎵薄膜越厚；而劑量越大，形成的氮化鎵的薄膜亦較厚。 與其它文獻比較，實驗中所製作出來的氮化鎵薄膜與其差異不大，故我們實驗參數下，所製作出來的氮化鎵薄膜厚度是可靠的。 Abstract Because of its good physical properties, GaN becomes an important m- aterial that is widely used on various dimensions. Nowadays, many techniq- ues are taken to produce GaN, such as MOCVD, MBE, etc. However, due to there are large lattice mismatch between substrates and GaN layer, by using nitridation of GaAs to form a buffer layer before producing GaN on the subs- trate is an alternative in recent years. In the experiment, ion beam nitridation of GaAs using two different vol- tages of N2+ ion beam fixed in 10 keV and 5 keV , the ion beam current dens- ity from 2 to 4 μA and fixed three different doses are used to nitridation of GaAs. An X photoelectron spectroscopy (XPS) is used to do the analysis here. Argon ion beam clean carbon and oxygen pollutants form a surface of gallium -rich on gallium arsenide. According to the analysis, it is found that the higher the voltage of gallium ion beam is, the thicker the film of GaN is, and the gre- ater the dose is, the film of GaN is also thicker. Compared with other references, the thickness of GaN films in this expe- riment has little difference with their results. Therefore, the experiment para- meter of the thickness of GaN film in this experiment is reliable.
