二元錫銅系統在目前的IC封裝與電子工業裡是最重要的反應系統，雖然錫銅反應已經被研究了很長的一段時間，但是為了要更了解這個系統，還是有非常多的研究正在持續進行，很多研究已經提出在錫銅界面會產生扇貝狀的介金屬化合物，但是還沒有提到銅基材的性質與界面反應的關係。此除之外，銅消耗量在無鉛銲料與銅基材的接點反應也是一個重要的議題，本研究將會探討銅基材的微觀結構與界面反應的關聯。 先以金相檢測還有XRD分析來區分銅基材的性質，分別有晶粒大小與優選方向的差異。在銅消耗量實驗，以350 μm之純錫銲料球跟銅基材在250 ℃下進行1、5、10、15分鐘的反應，從中可以發現晶粒較大的銅基材會有較小的銅消耗量，而優選方向的銅基材也會有較小的銅消耗量。在介金屬化合物的形貌實驗，以0.1克之純錫銲料球跟銅基材在250 ℃下進行30分鐘的反應，其Cu6Sn5與銅基材之夾角分佈也因銅基材的晶粒尺寸與優選方向的不同而有明顯的差異。 The binary Cu/Sn soldering system is the most important joint system in the current IC packaging and assembly industry. Although, the simple Sn/Cu reaction has been studied for a very long history, still, there are lots of research going on to understand it more. The scallop-type Cu-Sn compound grains formed at the Sn/Cu joint interface have reported by numerous researchers. Yet, none of them describe the relationship between the properties of Cu substrate and interfacial reaction. Also, the Cu consumption is a typical issue for Pb-free solders jointed with Cu-based bond pad. In this thesis, we will study the correlation between the microstructure of Cu substrate and the interfacial reaction. In this investigation, the Cu foils were performed by metallurgical examination and XRD analysis to examine the grain size morphology and preferred orientation distribution. In Cu consumption experiments, 350 μm Sn solder balls were placed on the pre-fluxed Cu foils and reflowed on the hot plate at 250 °C for 1, 5, 10, and 15 minutes. We found that the Cu consumption of Cu substrate with the (200) plane is larger than that with the (220) plane, and it is also decreasing with increasing grain size of Cu. In IMC morphology experiments, 0.1 g pure Sn were placed on the pre-fluxed Cu foils and reflowed on the hot plate at 250 °C for 30 minutes. From the observation, the IMC morphologies would be different due to the grain size and preferred orientation of Cu substrate.