近年來為了發展高亮度的發光二極體，而以藍光氮化鎵發光二極體之研究最具有潛力，其利用晶圓鍵合與雷射剝離技術發展出一垂直式的結構，能有效的提高發光亮度(效率)與使用時間(壽命)，並且解決了藍寶石基板的散熱問題與異質結構的熱應力問題，不過其晶圓鍵合與雷射剝離技術還有待改良的空間。 本研究著重於晶圓鍵合上，以發展至今之一氮化鎵生長於藍寶石基板鍵合於另一矽基板之結構，使用金/鎳接觸式的金屬薄膜層做低溫擴散的鍵合界面。利用Si/Au/Ni/Si之晶圓對於250、280或300℃之溫度與持溫30分鐘或1小時的參數條件，而於300℃有較好的擴散鍵合狀況。於穿透式電子顯微鏡觀察其剖面Au/Ni擴散鍵合狀況，再以二次離子質譜儀與化學分析電子光譜儀分析其金屬薄膜層擴散的縱深分佈。最後以300℃/30分鐘之參數運用於GaN/Ni/Au/Si結構，成功於低溫下之異質鍵合。 In recent years, in order to develop high-brightness light emitting diodes (LEDs), the blue GaN-LEDs are recognized as the potential material, using the wafer bonding and laser lift-off technology (LLO) to develop a vertical structure, that can effectively increase in high brightness (efficacy) and lifetime (ageing). It also solves the heat dissipation of the sapphire and the thermal stress between the heterostructure. However, there are still some problems for the wafer bonding and LLO. This study is intended as an investigation of wafer bonding technology. A process has been developed to bond gallium nitride structures grown on sapphire with silicon substrates, using gold/nickel thin metals contacted of low temperature diffusion bonding. Si/Au/Ni/Si structures are annealing for 250、280 or 300℃ by 30min or 1hr. The 300℃ have a better bonded situation. TEM showed the cross-section of the Au/Ni bonded situation; the SIMS and ESCA showed the concentration depth profiles. Finally, the GaN/Ni/Au/Si structure in low temperature bonding by using 300℃/30min of the parameters were succeed.
