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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26389

    Title: Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
    Authors: Hu,CW;Chang,TC;Tu,CH;Chiang,CN;Lin,CC;Lee,SW;Chang,CY;Sze,SM;Tseng,TY
    Contributors: 化學工程與材料工程學系
    Date: 2009
    Issue Date: 2010-06-29 17:26:57 (UTC+8)
    Publisher: 中央大學
    Abstract: In this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at 600 degrees C for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.
    Appears in Collections:[化學工程與材料工程研究所] 期刊論文

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