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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26854

    Title: Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer
    Authors: Chen,JC;Sheu,GJ;Hwu,FS;Chen,HI;Sheu,JK;Lee,TX;Sun,CC
    Contributors: 機械工程研究所
    Date: 2009
    Issue Date: 2010-06-29 18:01:46 (UTC+8)
    Publisher: 中央大學
    Abstract: The effects of current distribution in LED chips on the electrical potential and optical light extraction efficiency are investigated by a numerical simulation. The results show that when the resistivity of the current-spreading layer is decreased there is current-crowding near the n-contact. On the other hand, when the resistivity in the current-spreading layer increases, there is current-crowding near the p-contact. When the current is crowded near the n-contact due to less resistivity of the current-spreading layer, the input power is lower because of the smaller series resistance in the chip, and the light extraction efficiency is higher since the shadowing effect of the p-contact can be avoided. For L (p) = 50 mu m in this study, the light extraction efficiency at rho (ITO) = 0.1 x 10(-3) Omega center dot cm is 1.4 times better than that when L (p) = 100 mu m, even though the driving voltage is raised 1.02 times.
    Relation: OPTICAL REVIEW
    Appears in Collections:[機械工程研究所] 期刊論文

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