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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26875

    Title: Multiple negative differential resistances in crossed carbon nanotubes
    Authors: Al Ahmad,M;Dragoman,D;Dragoman,M;Plana,R;Ting,JH;Huang,FY;Li,TL
    Contributors: 機械工程研究所
    Date: 2009
    Issue Date: 2010-06-29 18:02:14 (UTC+8)
    Publisher: 中央大學
    Abstract: An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon substrate that acts as a gate. Alternating positive and negative differential resistance regions are generated as a function of the drain-source voltage values and can be slightly shifted by the gate voltage. Moreover, the negative differential resistance is retrieved in a large bandwidth, of up to 100 MHz, when the structure is excited with ac signals. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3138815]
    Appears in Collections:[機械工程研究所] 期刊論文

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