Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

NCU Institutional Repository > 研究中心 > 薄膜技術研究中心 > 期刊論文 > Item 987654321/27732

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/27732

题名:	Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers
作者:	Lu,TC;Chen,JR;Chen,SW;Kuo,HC;Kuo,CC;Lee,CC;Wang,SC
贡献者:	薄膜技術中心
关键词:	DISTRIBUTED BRAGG REFLECTORS;ENHANCED SPONTANEOUS EMISSION;CONTINUOUS-WAVE OPERATION;QUANTUM-WELL LASER;ROOM-TEMPERATURE;LIGHT EXTRACTION;BLUE;DESIGN;SINGLE;DIODES
日期:	2009
上传时间:	2010-06-29 19:15:55 (UTC+8)
出版者:	中央大學
摘要:	This paper reviews the fabrication technology and performance characteristics of optically pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs). The lasing action of optically pumped hybrid GaN-based VCSELs has been observed at room temperature due to the employment of high-quality and high-reflectivity AlN/GaN-based distributed Bragg reflectors in the VCSEL structure. Based on the device structure of the optically pumped hybrid GaN-based VCSELs, we further achieved the lasing action of electrically pumped GaN-based VCSELs under continuous-wave operation at 77 K. The laser has a threshold injection current of 1.4 mA and emits a blue wavelength at 462 nm together with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7 degrees with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5 x 10(-2) was measured.
關聯:	IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
显示于类别:	[薄膜技術研究中心] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	1524	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing