AlGaN/GaN Schottky Barrier Photodetector With Multi-MgxNy/GaN Buffer

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題名:	AlGaN/GaN Schottky Barrier Photodetector With Multi-MgxNy/GaN Buffer
作者:	Chang,SJ;Lee,KH;Chang,PC;Wang,YC;Kuo,CH;Wu,SL
貢獻者:	光電科學研究所
關鍵詞:	CHEMICAL-VAPOR-DEPOSITION;ELECTRON-MOBILITY TRANSISTORS;LIGHT-EMITTING-DIODES;HIGH INTERNAL GAIN;ULTRAVIOLET PHOTODETECTORS;PHOTOCONDUCTIVE GAIN;GAN;POLARIZATION;MECHANISMS;EXTRACTION
日期:	2009
上傳時間:	2010-06-29 19:40:41 (UTC+8)
出版者:	中央大學
摘要:	AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlCaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the mtilti-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.
關聯:	IEEE SENSORS JOURNAL
顯示於類別:	[光電科學研究所] 期刊論文

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