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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28063

    Title: Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition
    Authors: Kuo,CW;Fu,YK;Kuo,CH;Chang,LC;Tun,CJ;Pan,CJ;Chi,GC
    Contributors: 光電科學研究所
    Date: 2009
    Issue Date: 2010-06-29 19:41:07 (UTC+8)
    Publisher: 中央大學
    Abstract: Unintentionally doped GaN with conventional single low-temperature (LT) AlN buffer layer and with double MgxNy/AlN buffer layers both were prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN by using double MgxNy/AlN buffer layers. GaN with double MgxNy/AlN buffer layers reveals an asymmetrical reflection (10 2) and (0 0 2) with a smaller full-width at half-maximum (FWHM), and a higher mobility, lower background concentration and lower etching pit density (EPD) than the GaN with the LT-AlN buffer layer. (C) 2008 Elsevier B.V. All rights reserved.
    Appears in Collections:[光電科學研究所] 期刊論文

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