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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28093

    Title: GaN-Based Light-Emitting Diode Prepared on Nano-Inverted Pyramid GaN Template
    Authors: Kuo,CW;Chang,LC;Kuo,CH
    Contributors: 光電科學研究所
    Date: 2009
    Issue Date: 2010-06-29 19:41:36 (UTC+8)
    Publisher: 中央大學
    Abstract: Using self-aligned SiO nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.
    Appears in Collections:[光電科學研究所] 期刊論文

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