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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28101

    Title: Improvement of the Efficiency of Nitride-Based Light Emitting Diodes on Nanoinverted Pyramid GaN Templates
    Authors: Kuo,CH;Chang,LC;Kuo,CW;Tun,CJ
    Contributors: 光電科學研究所
    Date: 2009
    Issue Date: 2010-06-29 19:41:44 (UTC+8)
    Publisher: 中央大學
    Abstract: In this study, we introduce a method combining the inductively coupled plasma and wet etching process with SiO2 microspheres to fabricate the nanoinverted pyramid (NIP) structures of a GaN template. GaN epitaxial layers and GaN-based multiple quantum well light emitting diode (LED) structures with a conventional single GaN buffer and an NIP GaN template were proposed and fabricated. The NIP GaN template can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. By using an NIP GaN template, we can enhance LED output power by 32%. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3240596]
    Appears in Collections:[光電科學研究所] 期刊論文

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