Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls

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題名:	Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls
作者:	Kuo,CW;Lee,YC;Fu,YK;Tsai,CH;Wu,ML;Chi,GC;Kuo,CH;Tun,CJ
貢獻者:	光電科學研究所
關鍵詞:	LIGHT-EMITTING-DIODES;EXTRACTION EFFICIENCY;SAPPHIRE SUBSTRATE;GAN;SURFACE
日期:	2009
上傳時間:	2010-06-29 19:42:08 (UTC+8)
出版者:	中央大學
摘要:	In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.
關聯:	IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
顯示於類別:	[光電科學研究所] 期刊論文

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