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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28190


    Title: High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers
    Authors: Tsai,CD;Shiao,HP;Lee,CT;Tu,YK
    Contributors: 光電科學研究所
    Keywords: SEMICONDUCTOR
    Date: 1997
    Issue Date: 2010-06-29 19:43:21 (UTC+8)
    Publisher: 中央大學
    Abstract: To avoid the trap-induced, low-frequency internal gain and improve the reliability for thermal storage test, a novel structure of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers is investigated, The dark current density of the photodetectors is about 7 mu A/cm(2) Its responsivity at 0.83-mu m wavelength is about 0.48 A/W. After thermal storage at 150 degrees C for 10 h, no performance degradation was found in the novel photodetectors.
    Relation: IEEE PHOTONICS TECHNOLOGY LETTERS
    Appears in Collections:[光電科學研究所] 期刊論文

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