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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28192

    Title: Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)(2)S-x treatment
    Authors: Lee,CT;Lan,MH;Tsai,CD
    Contributors: 光電科學研究所
    Date: 1997
    Issue Date: 2010-06-29 19:43:24 (UTC+8)
    Publisher: 中央大學
    Abstract: To extend the high performances of the GaAs MSM photodetectors with InGaP buffer and capping layers, the (NH4)(2)S-x treatment of InGaP is investigated. The surface states are reduced by sulfur passivation. Whereupon, the performances of InGaP Schottky contact with Ti/Pt/Au metals are improved. The improved dark current and insensitive responsivity with incident optical power are demonstrated by suitable process control of sulfur passivation. (C) 1997 Elsevier Science Ltd.
    Appears in Collections:[光電科學研究所] 期刊論文

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