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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28192


    Title: Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)(2)S-x treatment
    Authors: Lee,CT;Lan,MH;Tsai,CD
    Contributors: 光電科學研究所
    Keywords: MOLECULAR-BEAM EPITAXY;TRANSISTORS;PASSIVATION;LASERS;IN0.5GA0.5P;SURFACES;SULFUR;GAIN
    Date: 1997
    Issue Date: 2010-06-29 19:43:24 (UTC+8)
    Publisher: 中央大學
    Abstract: To extend the high performances of the GaAs MSM photodetectors with InGaP buffer and capping layers, the (NH4)(2)S-x treatment of InGaP is investigated. The surface states are reduced by sulfur passivation. Whereupon, the performances of InGaP Schottky contact with Ti/Pt/Au metals are improved. The improved dark current and insensitive responsivity with incident optical power are demonstrated by suitable process control of sulfur passivation. (C) 1997 Elsevier Science Ltd.
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[光電科學研究所] 期刊論文

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