English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 78728/78728 (100%)
造訪人次 : 33349330      線上人數 : 1324
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/28202


    題名: The effect of O-2 on the quality of diamondlike films formed in a cathodic arc plasma deposition
    作者: Chen,PL;Tsai,MY;Lai,GR
    貢獻者: 光電科學研究所
    關鍵詞: TETRAHEDRAL AMORPHOUS-CARBON;EVAPORATION;GRAPHITE
    日期: 1997
    上傳時間: 2010-06-29 19:43:44 (UTC+8)
    出版者: 中央大學
    摘要: Amorphous diamondlike films are deposited on Si wafer at temperature lower than 300 degrees C in a cathodic are plasma deposition (CAPD) system. Graphite plate with density 1.9 g/cm(3) was employed as the cathode target and the carbon source. NdFeB magnets with 1000 G strength were installed behind the graphite tar et to steer the motion of are spots on graphite. The are current was selected as low as 55 A in order to minimize the emission of microparticles from graphite target. The are spots observed were moving steadily on the graphite target with a speed of about 1.5 cm/s. O-2/Ar gas mixtures were introduced into CAPD system and the total pressure was controlled to be 10 mTorr. The effects of the addition of O-2, the rf self-bias (V-B) applied to Si wafer and the deposition temperature (T-S) on the quality of diamondlike films were investigated. It is concluded that the addition of O-2 is the key factor that contributed to the quality improvement of diamondlike films. The higher the partial pressure of O-2, the more significant is the influence of V-B and T-S on the quality improvement of diamondlike films.
    關聯: APPLIED SURFACE SCIENCE
    顯示於類別:[光電科學研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML451檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明