MESFET PERFORMANCE AND LIMITATIONS OF OPTIMIZED GAAS STRAINED BUFFER LAYER GROWN ON INP BY MOLECULAR-BEAM EPITAXY

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28230

Title:	MESFET PERFORMANCE AND LIMITATIONS OF OPTIMIZED GAAS STRAINED BUFFER LAYER GROWN ON INP BY MOLECULAR-BEAM EPITAXY
Authors:	LEE,CT;SHIAO,HP;CHOU,YC
Contributors:	光電科學研究所
Date:	1995
Issue Date:	2010-06-29 19:44:31 (UTC+8)
Publisher:	中央大學
Abstract:	The effects of the thickness of the GaAs strained buffer layer on the electrical performance of GaAs field effect transistors are demonstrated. The GaAs MESFET has been fabricated on GaAs/InP epitaxial material grown by molecular beam epitaxy. From experimental results a minimum thickness of the strained buffer layer appears to be needed to compensate the effect of misfit dislocation due to lattice mismatch between the GaAs and InP substrate. The minimum required thickness amounts to 2 mu. The electron mobility and transconductance behavior demonstrate the effects of thickness of the strained buffer layer.
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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