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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29276


    Title: InAlGaAs fully quaternary doped-channel FETs recessed by CHF3+BCl3 reactive ion etching
    Authors: Lai,LS;Kao,HC;Chan,YJ
    Contributors: 電機工程研究所
    Date: 1999
    Issue Date: 2010-06-29 20:20:38 (UTC+8)
    Publisher: 中央大學
    Abstract: InAlGaAs fully quaternary heterostructure doped-channel FETs recessed by CHF3 + BCl3 reactive ion etching have been fabricated. The etching selectivity was optimised by adjusting the flaw rate ratio of this gas mixture. The device demonstrated good DC and microwave characteristics with a uniform distribution of threshold voltages, which illustrated the advantages of the RIE-recess process.
    Relation: ELECTRONICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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