Characteristics of a In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterojunction and its application on HEMT's

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题名:	Characteristics of a In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterojunction and its application on HEMT's
作者:	Chan,YJ;Wu,CS;Chen,CH;Shieh,JL;Chyi,JI
贡献者:	電機工程研究所
关键词:	MOLECULAR-BEAM EPITAXY;MESFETS
日期:	1997
上传时间:	2010-06-29 20:21:02 (UTC+8)
出版者:	中央大學
摘要:	The quarternary In-0.52(AlxGa1-x)(0.48)As compound on InP substrates is an important material for use in optoelectronic and microwave devices. We have systematically investigated the electrical properties of quarternary In-0.52(AlxGa1-x)(0.48)As layers, and found that a 10% addition of Ga atoms into the InAlAs layer improves the Schottky diode performance. The energy bandgap (E-g) for the In-0.52(AlxGa1-x)(0.48)As layer was (0.806 + 0.711x) eV, and the associated conduction-band discontinuity (Delta E-c), in the InAlGaAs/In0.53Ga0.47As heterojunction, was around (0.68 +/- 0.01)Delta E-g. Using this high quality In-0.52(Al0.9Ga0.1)(0.48)As layer in the Schottky and buffer layers, we obtained quarternary In-0.52(Al0.9Ga0.1)(0.48)As/In0.53Ga0.47As HEMT's. This quarternary HEMT revealed excellent dc and microwave characteristics. In comparison with the conventional InAlAs/InGaAs HEMT's, quarternary HEMT's demonstrated improved sidegating and device reliability.
關聯:	IEEE TRANSACTIONS ON ELECTRON DEVICES
显示于类别:	[電機工程研究所] 期刊論文

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