Defect study on the strain-relaxed InxAl1-xAs epilayers (x<0.4) grown on GaAs

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29298

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29298

题名:	Defect study on the strain-relaxed InxAl1-xAs epilayers (x<0.4) grown on GaAs
作者:	Shieh,JL;Chang,MN;Cheng,YS;Chyi,JI
贡献者:	電機工程研究所
关键词:	DEEP LEVELS
日期:	1997
上传时间:	2010-06-29 20:21:11 (UTC+8)
出版者:	中央大學
摘要:	Defects in Si-doped InxAl1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in the MBE-grown InxAl1-xAs. Low-temperature growth as well as thermal annealing were found to be capable of reducing these defects effectively, especially the dislocation defect.
關聯:	COMPOUND SEMICONDUCTORS 1996
显示于类别:	[電機工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	434	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing