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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29299

    Title: Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates
    Authors: Shieh,JL;Chang,MN;Cheng,YS;Chyi,JI
    Contributors: 電機工程研究所
    Date: 1997
    Issue Date: 2010-06-29 20:21:12 (UTC+8)
    Publisher: 中央大學
    Abstract: Defects in Si-doped InxAl1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAl1-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively. (C) 1997 American Institute of Physics.
    Appears in Collections:[電機工程研究所] 期刊論文

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