Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29302

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29302

題名:	Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions
作者:	Jen,TS;Shin,NF;Laih,LH;Chen,YA;Hong,JW;Chang,CY
貢獻者:	電機工程研究所
關鍵詞:	LIGHT-EMITTING-DIODES;AMORPHOUS-SILICON;INTERFACE;ELECTROLUMINESCENCE
日期:	1997
上傳時間:	2010-06-29 20:21:17 (UTC+8)
出版者:	中央大學
摘要:	A-SiC:H p-i-n thin-film LED's (TFLED's) containing a single graded-gap p-i-n junction (SG) or double graded-gap p-i-n and i-n junctions (DG) have been postulated and fabricated successfully on indium-tin-oxide (ITO)-coated glass substrates, with a plasma-enhanced chemical vapor deposition (PECVD) system, Some important characteristics and related physics of these two types of TFLED's are presented and discussed, At an injection current density (J) of 600 mA/cm(2), the brightness (B) of the SG and DG TFLED's obtained were 30 and 207 cd/m(2), respectively, This significant improvement of brightness, as compared to those of the previously reported TFLED's with a highest brightness of 20 cd/m(2), could be ascribed to the reduced interface states with the graded-gap junctions, lower contact resistance between ITO and p-layer due to a plasma treatment of ITO prior to p-layer deposition, post metallization annealing of thermally evaporated Al on n-layer, and higher optical gaps (E(opt)'s) of the doped layers employed, The slopes of the nearly linear B-J relationships show the diode factor very close to unity for the fabricated SG and DG TFLED's, This implies that the electroluminescence (EL) mechanism of these TFLED's might be a tail-to-tail-state recombination, In addition, the conduction currents of these TFLED's are almost temperature dependent, and that of the DG TFLED might consist of an ohmic current and a space-charge-limited current (SCLC) within the lower and higher applied-bias regions, respectively.
關聯:	IEEE TRANSACTIONS ON ELECTRON DEVICES
顯示於類別:	[電機工程研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	514	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....