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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29310


    Title: Monolithic optical receiver fabricated by AlGaAs/InGaAs doped-channel heterostructures
    Authors: Chien,FT;Chan,YJ
    Contributors: 電機工程研究所
    Date: 1997
    Issue Date: 2010-06-29 20:21:28 (UTC+8)
    Publisher: 中央大學
    Abstract: The integrated optoelectronic receivers, which consist of photoderectors and preamplifiers, are the key components for optical communication systems. In this study, we used the AlGaAs/InGaAs doped-channel heterostructure to fabricate and integrate both MSM-photodetectors(MSM-PDs) and a transimpedance amplifier. Heterostructure doped-channel FETs (DCFETs) have demonstrated a higher current density, a higher gate breakdown and rum-on voltage, and a better linearity, as compared to the MESFETs and HEMTs. These advantages provide an amplifier circuit to achieve a higher responsivity, and the most of all, a wider operation range and a better linearity. A responsivity of 1.92 KV/W was obtained in this configuration, while this value was 0.97 KV/W where the MESFET-type pre-amplifier was used.
    Relation: COMPOUND SEMICONDUCTORS 1996
    Appears in Collections:[電機工程研究所] 期刊論文

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