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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29335

    Title: Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7As/In(0.2)Gao(0.8)As heterostructures
    Authors: Yang,MT;Chan,YJ
    Contributors: 電機工程研究所
    Date: 1996
    Issue Date: 2010-06-29 20:22:05 (UTC+8)
    Publisher: 中央大學
    Abstract: The linearities of pseudomorphic Al0.3Ga0.7As/ In0.2Ga0.8As doped-channel FET's were characterized by comparing the characteristics of modulation-doped field-effect transistors (FET's) based on de and microwave evaluations. By using an undoped high-bandgap layer beneath the gate, the so-called parasitic MESFET-type conduction, which is common in HEMT's, can therefore be eliminated in doped-channel designs, Therefore, a wide and flat device performance together with a high current driving capability can be achieved in DCFET's. This linearity improvement in device performance suggests that doped-channel designs are more suitable for application in microwave power devices.
    Appears in Collections:[電機工程研究所] 期刊論文

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