English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23303498      Online Users : 541
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29339

    Title: Enhanced carrier and optical confinement of quantum well lasers with graded multi-quantum barriers
    Authors: Chyi,JI;Gau,JH;Wang,SK;Shieh,JL;Pan,JW
    Contributors: 電機工程研究所
    Date: 1996
    Issue Date: 2010-06-29 20:22:11 (UTC+8)
    Publisher: 中央大學
    Abstract: The enhancement of electron barrier height by multi-quantum barrier structure is simulated using transfer matrix method. An effective barrier height as high as 5.5 times the classical potential barrier is designed by using five stacks of GaAs/AlAs superlattices. Based on the simulated results, we construct both 0.78 mu m and 1.3 mu m graded-index separate confinement heterostructure lasers with enhanced carrier and optical confinements using graded multi-stack multi-quantum barriers. The threshold current densities of the lasers are estimated to be lower than those of the conventional graded-index separate confinement heterostructure lasers. Higher characteristic temperatures are also expected for these lasers.
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明