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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29340

    Title: Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates
    Authors: Yang,MT;Chan,YJ;Shieh,JL;Chyi,JI
    Contributors: 電機工程研究所
    Date: 1996
    Issue Date: 2010-06-29 20:22:12 (UTC+8)
    Publisher: 中央大學
    Abstract: An alternative In0.3Ga0.7As/In0.29Al0.71As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density, This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.
    Appears in Collections:[電機工程研究所] 期刊論文

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