English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23201709      Online Users : 553
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29342

    Title: GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors
    Authors: Chan,YJ;Wu,CS;Chyi,JI;Shieh,JL
    Contributors: 電機工程研究所
    Keywords: SUBSTRATE
    Date: 1996
    Issue Date: 2010-06-29 20:22:15 (UTC+8)
    Publisher: 中央大學
    Abstract: In0.29Al0.71As/In0.3Ga0.7As heterostructures grown on GaAs substrates with a step-graded metamorphic InxCa1-xAs buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In0.3Ga0.7As layer used as a buffer can be obtained. A 0.6-mu m-long gate HEMT based on this heterostructure demonstrated a g(m) of 230 mS/mm, an f(T) of 23 GHz, and an f(max) of 73 GHz. (C) 1996 John Wiley & Sons, Inc.
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明