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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29345

    Title: High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes
    Authors: Yuang,RH;Chien,YJ;Shieh,JL;Chyi,JI
    Contributors: 電機工程研究所
    Date: 1996
    Issue Date: 2010-06-29 20:22:20 (UTC+8)
    Publisher: 中央大學
    Abstract: The GaAs metal-semiconductor-metal photodetector (MSM-PD) with recessed metal electrodes have been fabricated and characterized. The recessed structure allows very short photocarrier sweep-out time because of both a strengthened electric field in the active region and a shortened distance for the photocarriers to reach the electrodes. Improved high-speed performance and enhanced peak amplitude in the temporal response can thus be obtained simultaneously. There is about a 60% and 50% improvement in the fall time and peak amplitude of the temporal response at 5 V bias over the conventional device, respectively. The measured results also show that high-speed operation can be achieved at a lower bias voltage for the GaAs MSM-PD with recessed metal electrodes as compared to the conventional one. Two-dimensional simulation was carried out to give an insight into the operation principle of this device. (C) 1996 American Institute of Physics.
    Appears in Collections:[電機工程研究所] 期刊論文

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