Monolithic microwave AlGaAs/InGaAs doped-channel FET switches

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/29352

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29352

Title:	Monolithic microwave AlGaAs/InGaAs doped-channel FET switches
Authors:	Ke,LW;Chan,YJ;Chiang,YC
Contributors:	電機工程研究所
Date:	1996
Issue Date:	2010-06-29 20:22:31 (UTC+8)
Publisher:	中央大學
Abstract:	AlGaAs / InCaAs heterostructure doped-channel FETs were used to fabricate a monolithic microwave front-end switch. The gate width of FETs were characterized to obtain an optimum condition to achieve better microwave performance. An insertion loss lower than 1 dB together with an isolation higher than 20 dB can be realized in this monolithic switch at a frequency below 3 GHz. (C) 1996 John Wiley & Sons, Inc.
Relation:	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	535	View/Open

社群 sharing