English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23272286      Online Users : 589
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29358

    Title: Reactive-ion etching of WSix in CF4+O-2 and the associated damage in GaAs
    Authors: Chan,YJ;Su,CS;Sung,KT
    Contributors: 電機工程研究所
    Date: 1996
    Issue Date: 2010-06-29 20:22:40 (UTC+8)
    Publisher: 中央大學
    Abstract: Assessments of WSix reactive-ion etching in terms of the different CF4 to O-2 flow rate ratio were characterized. Based upon the evaluations from etching rates, side-wall profiles, surface roughness, and damages, we observed that the optimum etching condition was at a ratio of 10:1. The recovery of reactive-ion-etching-treated GaAs damaged layers through the thermal treatment was also investigated as a function of the annealing temperatures and duration times. These parameter evaluations were for the purpose of achieving a high performance GaAs metal-semiconductor field-effect transistor. (C) 1996 American Vacuum Society.
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明