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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29358


    題名: Reactive-ion etching of WSix in CF4+O-2 and the associated damage in GaAs
    作者: Chan,YJ;Su,CS;Sung,KT
    貢獻者: 電機工程研究所
    關鍵詞: CYCLOTRON-RESONANCE SOURCE;PLASMA;TUNGSTEN
    日期: 1996
    上傳時間: 2010-06-29 20:22:40 (UTC+8)
    出版者: 中央大學
    摘要: Assessments of WSix reactive-ion etching in terms of the different CF4 to O-2 flow rate ratio were characterized. Based upon the evaluations from etching rates, side-wall profiles, surface roughness, and damages, we observed that the optimum etching condition was at a ratio of 10:1. The recovery of reactive-ion-etching-treated GaAs damaged layers through the thermal treatment was also investigated as a function of the annealing temperatures and duration times. These parameter evaluations were for the purpose of achieving a high performance GaAs metal-semiconductor field-effect transistor. (C) 1996 American Vacuum Society.
    關聯: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    顯示於類別:[電機工程研究所] 期刊論文

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