English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23229384      Online Users : 581
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29386


    Title: HIGH-TEMPERATURE PERFORMANCE OF GA0.51IN0.49P/IN0.2GA0.8AS PSEUDOMORPHIC HEMTS WITH WSIX GATES
    Authors: CHAN,YJ;YEH,TJ;KUO,JM
    Contributors: 電機工程研究所
    Keywords: MOCVD
    Date: 1995
    Issue Date: 2010-06-29 20:23:23 (UTC+8)
    Publisher: 中央大學
    Abstract: WSix gate pseudomorphic GaInP/In0.2Ga0.8As HEMTs were fabricated, and evaluated for the purposes of high temperature operations. Based on the high thermal stability of WSi, gates, no significant change in device characteristics was observed for temperatures up to 200 degrees C. Functional devices can still be obtained at 300 degrees C. Comparing with the other gate materials, for example Ti/Au or Al gates, WSix demonstrates the advantages of this highly thermal stable property.
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML461View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明