BAND OFFSETS OF IN0.30GA0.70AS/IN0.29AL0.71AS HETEROJUNCTION GROWN ON GAAS SUBSTRATE

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29408

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题名:	BAND OFFSETS OF IN0.30GA0.70AS/IN0.29AL0.71AS HETEROJUNCTION GROWN ON GAAS SUBSTRATE
作者:	SHIEH,JL;CHYI,JI;LIN,RJ;LIN,RM;PAN,JW
贡献者:	電機工程研究所
关键词:	SEMICONDUCTOR HETEROJUNCTIONS;HETEROSTRUCTURES;DIPOLES;ENERGY
日期:	1994
上传时间:	2010-06-29 20:24:01 (UTC+8)
出版者:	中央大學
摘要:	Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/ In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 +/- 0.05eV which corresponds to a conduction band offset to bandgap difference ratio of similar to 0.66. The comparison between experimental and theoretical results is presented.
關聯:	ELECTRONICS LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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