English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23229355      Online Users : 574
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29418


    Title: HIGH-TEMPERATURE PERFORMANCE OF GAINP AND ALINP HEMTS WITH WSIX GATES
    Authors: CHAN,YJ;KUO,JM
    Contributors: 電機工程研究所
    Keywords: TRANSISTORS;MOCVD
    Date: 1994
    Issue Date: 2010-06-29 20:24:17 (UTC+8)
    Publisher: 中央大學
    Abstract: Both GaInP/In0.2Ga0.8As and AlInP/In0.2Ga0.8As HEMT's were fabricated with WSix gates and evaluated at high temperature operations. Based on the high stability of WSix gates, both devices functioned at temperature up to 300 degrees C. GaInP HEMT's showed a g(m) reduction from 176 mS/mm at 25 degrees C to 97 mS/mm at 300-degrees C, while V-th shifted from -1.44 V to -3.31 V. AlInP HEMT's also showed a g(m) decrease from 135 mS/mm at 25 degrees C to 70 mS/mm at 300 degrees C, while V-th shifted from -0.4 V to -0.84 V. Both of these devices with WSix gates offer a potential applications to high power and high temperature operations.
    Relation: GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML387View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明