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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29420

    Authors: CHAN,YJ;YEH,TJ;KUO,JM
    Contributors: 電機工程研究所
    Keywords: TRANSISTOR
    Date: 1994
    Issue Date: 2010-06-29 20:24:20 (UTC+8)
    Publisher: 中央大學
    Abstract: In0.49Ga0.15P/In0.15Ga0.85As heterostructure pulsed doped-channel FETs were fabricated and evaluated by DC and microwave measurements. This pulsed doped-channel approach provides a higher carrier density and a higher breakdown voltage, as compared to the conventional modulation-doped approach. A g(m) of 207mS/mm, an f(T) of 16.7GHz, and an f(max) of 31.6GHz, were obtained with a 1 mum-long gate at 300K.
    Appears in Collections:[電機工程研究所] 期刊論文

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